RESEARCH PAPER
Stress evolution mechanism and thermo-mechanical reliability analysis of copper-filled TSV interposer
1
Center for System Reliability and Safety, School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China, Sichuan, 611731, P. R. China
2
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China
Publication date: 2020-12-31
Eksploatacja i Niezawodność – Maintenance and Reliability 2020;22(4):705-714
HIGHLIGHTS
- The stress evolution mechanism of TSV under thermal cycling was confirmed first time.
- The relationship between the stresses state and failures of TSV interposer was found.
- An original combined use of FEM simulation and failure analysis was proposed for TSV.
KEYWORDS
Through silicon viasthermo-mechanical reliabilityfailure mechanismfinite elementanalysis3D integrated packagingthermal cycling experiment
ABSTRACT
Through silicon via (TSV) has become one of the key emerging trends of three-dimensional
(3D) packages, as it can realize vertically interconnect between stacked-dies. Due to large
mismatch in thermal expansion coefficients (CTE) between the copper via and the silicon,
significant mechanical stresses are induced at the interfaces when TSV structure is subjected
to thermal stresses, which would greatly affect the reliability and electrical performance of
TSV 3D device. In this paper, the relationship between the state of stresses and failure of
TSV had been explored by combining finite element model simulation (FEM) and failure
physical analysis. The position of the maximum stress of the TSV structure was obtained by
FEM analysis. The relationship of stress and displacement change with temperature was also
studied. And a thermal cycling experiment was conducted to validate the simulation results.
Physical failure analysis after thermal cycling experiment was used to verify the degradation
mechanism predicted by thermo-mechanical simulation.
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| eISSN: | 2956-3860 |
| ISSN: | 1507-2711 |
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